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Low Temperature Rate Constants for the Reactions of O( 1 D) with N 2 , O 2 , and Ar

The kinetics of the gas-phase quenching reactions O(1 D) + N 2 , O(1 D) + O 2 and O(1 D) + Ar have been studied over the 50-296 K temperature range using the Laval nozzle method. O(1 D) atoms were created in-situ by the pulsed photolysis of O 3 precursor molecules at 266 nm. Rate constants for these...

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Bibliographic Details
Published in:The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory Molecules, spectroscopy, kinetics, environment, & general theory, 2016-02, Vol.120 (27), p.4838-4844
Main Authors: Grondin, Romain, Loison, Jean-Christophe J.-C., Hickson, Kevin
Format: Article
Language:English
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Summary:The kinetics of the gas-phase quenching reactions O(1 D) + N 2 , O(1 D) + O 2 and O(1 D) + Ar have been studied over the 50-296 K temperature range using the Laval nozzle method. O(1 D) atoms were created in-situ by the pulsed photolysis of O 3 precursor molecules at 266 nm. Rate constants for these processes were measured directly, following the decay of O(1 D) atoms through vacuum ultra violet laser induced fluorescence at 115.215 nm. For the O(1 D) + N 2 and O(1 D) + O 2 reactions, the quenching efficiencies are seen to increase as the temperature falls. For the O(1 D) + N 2 system, this indicates the likely influence of the intermediate complex lifetime on the quenching rate through non-adiabatic processes. For the O(1 D) + O 2 system which is considerably more complex, this behavior could result from the interactions between several potential energy surfaces.
ISSN:1089-5639
1520-5215
DOI:10.1021/acs.jpca.5b12358