The role of intervalley phonons in hot carrier transfer and extraction in type-II InAs/AlAsSb quantum-well solar cells

Simultaneous continuous wave (CW) photoluminescence and monochromatic current density-voltage (J-V) measurements of InAs/AlAsSb QW p-i-n diodes reveal stable hot carriers observed at relatively low power (nearly independent of power). This behavior is attributed to preferential scattering of high en...

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Bibliographic Details
Published in:Semiconductor science and technology 2019-09, Vol.34 (9), p.94001
Main Authors: Whiteside, V R, Esmaielpour, H, Mishima, T D, Dorman, K R, Santos, M B, Ferry, D K, Sellers, I R
Format: Article
Language:English
Subjects:
Engineering Sciences
hot carriers
l-valley
Micro and nanotechnologies
Microelectronics
Optics
Photonic
photovoltaic
Physics
Signal and Image processing
type-II band alignment
x-valley
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Summary:Simultaneous continuous wave (CW) photoluminescence and monochromatic current density-voltage (J-V) measurements of InAs/AlAsSb QW p-i-n diodes reveal stable hot carriers observed at relatively low power (nearly independent of power). This behavior is attributed to preferential scattering of high energy carriers to the upper satellite L- and X-valleys, which inhibits carrier thermalization via LO phonon emission. Although both high electric field and optical excitation are shown to enable stable hot carrier generation in the quantum wells (QWs), the extraction of these carriers is inhibited by the mismatch in valley degeneracy (L to Γ) across the InAs QW/n-AlInAs layers resulting in carrier localization in the QWs in the operating regime of the solar cell.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab312b