Engineering the anisotropy of AlAs wet oxidation using silicon implantation

We investigate the influence of silicon implantation on wet lateral oxidation of AlAs and show that the introduction of n-type doping silicon ions permits the adjustment of the oxidation kinetics and anisotropy. Using mesas with selectively patterned implantation regions, we demonstrate the fabricat...

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Bibliographic Details
Published in:Optical materials express 2021-10, Vol.11 (10), p.3600-3607
Main Authors: Calvez, Stephane, Arnoult, Alexandre, Almuneau, Guilhem
Format: Article
Language:English
Subjects:
Anisotropy
Confinement
Engineering Sciences
Implantation
Materials
Mesas
Micro and nanotechnologies
Microelectronics
Optics
Oxidation
Photonic
Reaction kinetics
Silicon
Wet oxidation
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Summary:We investigate the influence of silicon implantation on wet lateral oxidation of AlAs and show that the introduction of n-type doping silicon ions permits the adjustment of the oxidation kinetics and anisotropy. Using mesas with selectively patterned implantation regions, we demonstrate the fabrication of oxide apertures unachievable using the standard process such as oxide lateral gratings whose pitch can range down to 4 µm and crosses with 40°-angle tips. This approach thus constitutes an easy and flexible way to engineer the oxidation process and opens the path to new confinement geometries for lateral confinement patterns in photonics devices and in particular VCSELs.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.441062