Study of structural and electrical properties of ferroelectric HZO films obtained by single-target sputtering

In this work, we study the structural and electrical properties of Hafnium Zirconium Oxide (HZO) thin films deposited by Hf0.5Zr0.5O2 single-target sputtering to fabricate a TiN/(14-/22 nm-thick) HZO/TiN stack. The structural analysis of the HZO thin films performed by in situ x-ray diffraction upon...

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Bibliographic Details
Published in:AIP advances 2021-08, Vol.11 (8), p.085004-085004-8
Main Authors: Hachemi, M. B., Salem, B., Consonni, V., Roussel, H., Garraud, A., Lefevre, G., Labau, S., Basrour, S., Bsiesy, A.
Format: Article
Language:English
Subjects:
Annealing
Chemical composition
Computer Science
Current voltage characteristics
Electric fields
Electrical properties
Ferroelectric materials
Ferroelectricity
Orthorhombic phase
Other
Photoelectrons
Sputtering
Structural analysis
Thin films
Zirconium oxides
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Summary:In this work, we study the structural and electrical properties of Hafnium Zirconium Oxide (HZO) thin films deposited by Hf0.5Zr0.5O2 single-target sputtering to fabricate a TiN/(14-/22 nm-thick) HZO/TiN stack. The structural analysis of the HZO thin films performed by in situ x-ray diffraction upon thermal annealing shows the formation of the HZO orthorhombic phase at annealing temperatures as low as 370 °C. X-ray photoelectron spectroscopy interestingly reveals an identical chemical composition of the deposited HZO thin films and the sputtered target, i.e., an Hf:Zr ratio of 1:1. The current–voltage characteristic of the TiN/HZO/TiN stack shows a current density of 10−5 A/cm2 at an applied electric field of 1 MV/cm, which, being rather low, gives a strong indication of the good electrical quality of the HZO layer. Finally, a butterfly-like capacitance–voltage loop is obtained on the TiN/HZO/TiN stack, indicating a ferroelectric behavior of the HZO layer.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0058656