Planar faults in layered Bi-containing perovskites studied by X-ray diffraction line profile analysis

Profile fitting procedures associated with integral breadth studies and Fourier analysis are applied to the study of the complex Bi‐containing layered perovskite SrBi2Nb2O9. Strong line broadening anisotropy is evidenced. Both `size' and `strain' effects contribute to the observed width. H...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied crystallography 2001-12, Vol.34 (6), p.699-703
Main Authors: Boulle, A., Legrand, C., Guinebretière, R., Mercurio, J. P., Dauger, A.
Format: Article
Language:English
Subjects:
Chemical Sciences
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Engineering Sciences
Exact sciences and technology
Experimental determination of defects by diffraction and scattering
layer structures
Material chemistry
Materials
perovskites
Physics
profile analysis
size broadening
stacking faults
Stacking faults and other planar or extended defects
strain broadening
Structure of solids and liquids
crystallography
thermal annealing
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Profile fitting procedures associated with integral breadth studies and Fourier analysis are applied to the study of the complex Bi‐containing layered perovskite SrBi2Nb2O9. Strong line broadening anisotropy is evidenced. Both `size' and `strain' effects contribute to the observed width. However, `size' broadening along the [00l] direction is essentially caused by stacking faults. The coherently diffracting domain sizes are deduced from Fourier analysis of the diffraction patterns and a rough estimate of the mean distance between faults is given. Thermal annealing significantly decreases the stacking fault density.
ISSN:1600-5767
0021-8898
1600-5767
DOI:10.1107/S0021889801011700