Deposition of hydrogen chloride gas on copper wafer depending on humidity and HCl concentration

Residual volatile HCl acid remaining on the wafer surface after certain microelectronic fabrication can lead to the yield defectiveness of integrated circuits made of copper (Cu). The control of HCl contamination is a key point to avoid the yield loss. In order to elucidate the deposition mechanism...

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Bibliographic Details
Published in:Microelectronic engineering 2019-02, Vol.207, p.1-6
Main Authors: Tran, Minh-Phuong, Gonzalez-Aguirre, Paola, Beitia, Carlos, Lundgren, Jorgen, Moon, Sung-In, Fontaine, Hervé
Format: Article
Language:English
Subjects:
Airborne molecular contamination (AMC)
Airborne observation
Contamination
Copper
Copper-coated wafer
Cross-contamination
Deposition
Engineering Sciences
Exposure
HCl hydrogen chloride gas
Humidity
Hydrochloric acid
Hydrogen chloride
Integrated circuits
Liquid phases
Microelectronics
Oxidation
Relative humidity
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Summary:Residual volatile HCl acid remaining on the wafer surface after certain microelectronic fabrication can lead to the yield defectiveness of integrated circuits made of copper (Cu). The control of HCl contamination is a key point to avoid the yield loss. In order to elucidate the deposition mechanism of HCl on copper surface, Cu-coated wafers were exposed to HCl at different HCl airborne concentrations (20–450 ppbv) and at different relative humidity (
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2019.01.001