Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2020-07, Vol.67 (7), p.1365-1373
Main Authors: Niskanen, K., Touboul, A., Germanicus, Rosine Coq, Michez, A., Javanainen, A., Wrobel, F., Boch, Jérôme, Pouget, Vincent, Saigne, Frédéric
Format: Article
Language:English
Subjects:
Nuclear Experiment
Physics
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2020.2983599