Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving...

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Published in:IEEE transactions on nuclear science 2020-07, Vol.67 (7), p.1365-1373
Main Authors: Niskanen, K., Touboul, A., Germanicus, Rosine Coq, Michez, A., Javanainen, A., Wrobel, F., Boch, Jérôme, Pouget, Vincent, Saigne, Frédéric
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Nuclear Experiment
Physics
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container_issue 7
container_start_page 1365
container_title IEEE transactions on nuclear science
container_volume 67
creator Niskanen, K.
Touboul, A.
Germanicus, Rosine Coq
Michez, A.
Javanainen, A.
Wrobel, F.
Boch, Jérôme
Pouget, Vincent
Saigne, Frédéric
description The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
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fullrecord <record><control><sourceid>hal</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_03511987v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_03511987v1</sourcerecordid><originalsourceid>FETCH-hal_primary_oai_HAL_hal_03511987v13</originalsourceid><addsrcrecordid>eNqVi0FLAzEUhINYcGt795irh13zdhuaHKVUWtAq3d6Xt7spPkm75SUq_fem0D8gDMzMx4wQD6AKAGWfdpu6KFWpitKaSlt7IzLQ2uSg5-ZWZEqBye3M2jsxDuEr1ZlWOhPt-nDCLsphL5fedZGpQy_ryC4Eicdebtx35OEo18zYE0ZKOWnrPGFLnuL58q1T6hJeILfUO_kx_DqWb-_1y3I3EaM9-uCmV78Xj4kuVvkn-ubEdEA-NwNSs3p-bS5MVRrAmvkPVP_Z_gHIaE78</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET</title><source>IEEE Xplore (Online service)</source><creator>Niskanen, K. ; Touboul, A. ; Germanicus, Rosine Coq ; Michez, A. ; Javanainen, A. ; Wrobel, F. ; Boch, Jérôme ; Pouget, Vincent ; Saigne, Frédéric</creator><creatorcontrib>Niskanen, K. ; Touboul, A. ; Germanicus, Rosine Coq ; Michez, A. ; Javanainen, A. ; Wrobel, F. ; Boch, Jérôme ; Pouget, Vincent ; Saigne, Frédéric</creatorcontrib><description>The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2020.2983599</identifier><language>eng</language><publisher>Institute of Electrical and Electronics Engineers</publisher><subject>Nuclear Experiment ; Physics</subject><ispartof>IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1365-1373</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-5660-7501 ; 0000-0003-1083-1273 ; 0000-0002-2437-1223 ; 0000-0001-6126-6708 ; 0000-0002-2714-849X ; 0000-0001-7906-3669 ; 0000-0002-6698-4853 ; 0000-0002-5660-7501 ; 0000-0003-1083-1273 ; 0000-0002-2437-1223 ; 0000-0001-7906-3669 ; 0000-0002-6698-4853 ; 0000-0002-2714-849X ; 0000-0001-6126-6708</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,778,782,883,27907,27908</link.rule.ids><backlink>$$Uhttps://normandie-univ.hal.science/hal-03511987$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Niskanen, K.</creatorcontrib><creatorcontrib>Touboul, A.</creatorcontrib><creatorcontrib>Germanicus, Rosine Coq</creatorcontrib><creatorcontrib>Michez, A.</creatorcontrib><creatorcontrib>Javanainen, A.</creatorcontrib><creatorcontrib>Wrobel, F.</creatorcontrib><creatorcontrib>Boch, Jérôme</creatorcontrib><creatorcontrib>Pouget, Vincent</creatorcontrib><creatorcontrib>Saigne, Frédéric</creatorcontrib><title>Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET</title><title>IEEE transactions on nuclear science</title><description>The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.</description><subject>Nuclear Experiment</subject><subject>Physics</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqVi0FLAzEUhINYcGt795irh13zdhuaHKVUWtAq3d6Xt7spPkm75SUq_fem0D8gDMzMx4wQD6AKAGWfdpu6KFWpitKaSlt7IzLQ2uSg5-ZWZEqBye3M2jsxDuEr1ZlWOhPt-nDCLsphL5fedZGpQy_ryC4Eicdebtx35OEo18zYE0ZKOWnrPGFLnuL58q1T6hJeILfUO_kx_DqWb-_1y3I3EaM9-uCmV78Xj4kuVvkn-ubEdEA-NwNSs3p-bS5MVRrAmvkPVP_Z_gHIaE78</recordid><startdate>202007</startdate><enddate>202007</enddate><creator>Niskanen, K.</creator><creator>Touboul, A.</creator><creator>Germanicus, Rosine Coq</creator><creator>Michez, A.</creator><creator>Javanainen, A.</creator><creator>Wrobel, F.</creator><creator>Boch, Jérôme</creator><creator>Pouget, Vincent</creator><creator>Saigne, Frédéric</creator><general>Institute of Electrical and Electronics Engineers</general><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-5660-7501</orcidid><orcidid>https://orcid.org/0000-0003-1083-1273</orcidid><orcidid>https://orcid.org/0000-0002-2437-1223</orcidid><orcidid>https://orcid.org/0000-0001-6126-6708</orcidid><orcidid>https://orcid.org/0000-0002-2714-849X</orcidid><orcidid>https://orcid.org/0000-0001-7906-3669</orcidid><orcidid>https://orcid.org/0000-0002-6698-4853</orcidid><orcidid>https://orcid.org/0000-0002-5660-7501</orcidid><orcidid>https://orcid.org/0000-0003-1083-1273</orcidid><orcidid>https://orcid.org/0000-0002-2437-1223</orcidid><orcidid>https://orcid.org/0000-0001-7906-3669</orcidid><orcidid>https://orcid.org/0000-0002-6698-4853</orcidid><orcidid>https://orcid.org/0000-0002-2714-849X</orcidid><orcidid>https://orcid.org/0000-0001-6126-6708</orcidid></search><sort><creationdate>202007</creationdate><title>Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET</title><author>Niskanen, K. ; Touboul, A. ; Germanicus, Rosine Coq ; Michez, A. ; Javanainen, A. ; Wrobel, F. ; Boch, Jérôme ; Pouget, Vincent ; Saigne, Frédéric</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-hal_primary_oai_HAL_hal_03511987v13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Nuclear Experiment</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Niskanen, K.</creatorcontrib><creatorcontrib>Touboul, A.</creatorcontrib><creatorcontrib>Germanicus, Rosine Coq</creatorcontrib><creatorcontrib>Michez, A.</creatorcontrib><creatorcontrib>Javanainen, A.</creatorcontrib><creatorcontrib>Wrobel, F.</creatorcontrib><creatorcontrib>Boch, Jérôme</creatorcontrib><creatorcontrib>Pouget, Vincent</creatorcontrib><creatorcontrib>Saigne, Frédéric</creatorcontrib><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Niskanen, K.</au><au>Touboul, A.</au><au>Germanicus, Rosine Coq</au><au>Michez, A.</au><au>Javanainen, A.</au><au>Wrobel, F.</au><au>Boch, Jérôme</au><au>Pouget, Vincent</au><au>Saigne, Frédéric</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET</atitle><jtitle>IEEE transactions on nuclear science</jtitle><date>2020-07</date><risdate>2020</risdate><volume>67</volume><issue>7</issue><spage>1365</spage><epage>1373</epage><pages>1365-1373</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><abstract>The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.</abstract><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/TNS.2020.2983599</doi><orcidid>https://orcid.org/0000-0002-5660-7501</orcidid><orcidid>https://orcid.org/0000-0003-1083-1273</orcidid><orcidid>https://orcid.org/0000-0002-2437-1223</orcidid><orcidid>https://orcid.org/0000-0001-6126-6708</orcidid><orcidid>https://orcid.org/0000-0002-2714-849X</orcidid><orcidid>https://orcid.org/0000-0001-7906-3669</orcidid><orcidid>https://orcid.org/0000-0002-6698-4853</orcidid><orcidid>https://orcid.org/0000-0002-5660-7501</orcidid><orcidid>https://orcid.org/0000-0003-1083-1273</orcidid><orcidid>https://orcid.org/0000-0002-2437-1223</orcidid><orcidid>https://orcid.org/0000-0001-7906-3669</orcidid><orcidid>https://orcid.org/0000-0002-6698-4853</orcidid><orcidid>https://orcid.org/0000-0002-2714-849X</orcidid><orcidid>https://orcid.org/0000-0001-6126-6708</orcidid></addata></record>
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Physics
title Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T02%3A47%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Impact%20of%20Electrical%20Stress%20and%20Neutron%20Irradiation%20on%20Reliability%20of%20Silicon%20Carbide%20Power%20MOSFET&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Niskanen,%20K.&rft.date=2020-07&rft.volume=67&rft.issue=7&rft.spage=1365&rft.epage=1373&rft.pages=1365-1373&rft.issn=0018-9499&rft.eissn=1558-1578&rft_id=info:doi/10.1109/TNS.2020.2983599&rft_dat=%3Chal%3Eoai_HAL_hal_03511987v1%3C/hal%3E%3Cgrp_id%3Ecdi_FETCH-hal_primary_oai_HAL_hal_03511987v13%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true