Structured ZnO-based contacts deposited by non-reactive rf magnetron sputtering on ultra-thin SiO2/Si through a stencil mask

In this paper, we study the localized deposition of ZnO micro and nanostructures deposited by non-reactive rf-magnetron sputtering through a stencil mask on ultra-thin (10 nm) SiO2 layers containing a single plane of silicon nanocrystals (NCs), synthetized by ultra-low energy ion implantation follow...

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Bibliographic Details
Published in:Thin solid films 2009-12, Vol.518 (4), p.1044-1047
Main Authors: Barnabé, A., Lalanne, M., Presmanes, L., Soon, J.M., Tailhades, Ph, Dumas, C., Grisolia, J., Arbouet, A., Paillard, V., BenAssayag, G., van den Boogaart, M.A.F., Savu, V., Brugger, J., Normand, P.
Format: Article
Language:English
Subjects:
Engineering Sciences
Materials
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Summary:In this paper, we study the localized deposition of ZnO micro and nanostructures deposited by non-reactive rf-magnetron sputtering through a stencil mask on ultra-thin (10 nm) SiO2 layers containing a single plane of silicon nanocrystals (NCs), synthetized by ultra-low energy ion implantation followed by thermal annealing. The localized ZnO-deposited areas are reproducing the exact stencil mask patterns. A resistivity of around 5×10−3 Ω cm is measured on ZnO layer. The as-deposited ZnO material is 97% transparent above the wavelength at 400 nm. ZnO nanostructures can thus be used as transparent electrodes for Si NCs embedded in the gate-oxide of MOS devices.
ISSN:0040-6090
DOI:10.1016/j.tsf.2009.03.232