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Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration
Diamond has been identified as a very promising material for X and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond 500 μ m thick has been tested. Photoconductive measurements in coplanar and...
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Published in: | Applied physics letters 2005-05, Vol.86 (21), p.213504-213504-3 |
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container_end_page | 213504-3 |
container_issue | 21 |
container_start_page | 213504 |
container_title | Applied physics letters |
container_volume | 86 |
creator | De Sio, A. Achard, J. Tallaire, A. Sussmann, R. S. Collins, A. T. Silva, F. Pace, E. |
description | Diamond has been identified as a very promising material for
X
and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond
500
μ
m
thick has been tested. Photoconductive measurements in coplanar and transverse configurations have been performed to characterize the device sensitivity in the 140-250 nm spectral range. Very high sensitivity values were achieved in both configurations. The sensitivity in the transverse configuration is at least 300 times higher than in the coplanar configuration. |
doi_str_mv | 10.1063/1.1935039 |
format | article |
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X
and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond
500
μ
m
thick has been tested. Photoconductive measurements in coplanar and transverse configurations have been performed to characterize the device sensitivity in the 140-250 nm spectral range. Very high sensitivity values were achieved in both configurations. The sensitivity in the transverse configuration is at least 300 times higher than in the coplanar configuration.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1935039</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Engineering Sciences</subject><ispartof>Applied physics letters, 2005-05, Vol.86 (21), p.213504-213504-3</ispartof><rights>2005 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-7419a29c536a090213b86424bf67c91b62345fde161163abd9bfc7ba7c9fb4993</citedby><cites>FETCH-LOGICAL-c384t-7419a29c536a090213b86424bf67c91b62345fde161163abd9bfc7ba7c9fb4993</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1935039$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,778,780,791,881,27903,27904,76129</link.rule.ids><backlink>$$Uhttps://hal.science/hal-03575547$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>De Sio, A.</creatorcontrib><creatorcontrib>Achard, J.</creatorcontrib><creatorcontrib>Tallaire, A.</creatorcontrib><creatorcontrib>Sussmann, R. S.</creatorcontrib><creatorcontrib>Collins, A. T.</creatorcontrib><creatorcontrib>Silva, F.</creatorcontrib><creatorcontrib>Pace, E.</creatorcontrib><title>Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration</title><title>Applied physics letters</title><description>Diamond has been identified as a very promising material for
X
and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond
500
μ
m
thick has been tested. Photoconductive measurements in coplanar and transverse configurations have been performed to characterize the device sensitivity in the 140-250 nm spectral range. Very high sensitivity values were achieved in both configurations. The sensitivity in the transverse configuration is at least 300 times higher than in the coplanar configuration.</description><subject>Engineering Sciences</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLAzEQhYMoWKsH_0GuHrZmNptscxFKqVYoeNFzyGaTNrrdlCQt9N-b2kVPnoZ5782D-RC6BzIBwukjTEBQRqi4QCMgdV1QgOklGhFCaMEFg2t0E-NnXllJ6Qh9LTqjU_CF3yWnVYeDiTvfR4O9xQpH1687U-hwjCmbrVNb37d436WgDs53JuHdxievs7rXyQfsepy9Ph5MyCVZt269Dyo539-iK6u6aO6GOUYfz4v3-bJYvb28zmerQtNplYq6AqFKoRnlighSAm2mvCqrxvJaC2h4SStmWwMcgFPVtKKxum5UNm1TCUHH6OHcu1Gd3AW3VeEovXJyOVvJk0Yoqxmr6gP8ZXXwMQZjfw-AyBNRCXIgmrNP52zULv189H94wCoHrPKElX4DKD9_rg</recordid><startdate>20050523</startdate><enddate>20050523</enddate><creator>De Sio, A.</creator><creator>Achard, J.</creator><creator>Tallaire, A.</creator><creator>Sussmann, R. S.</creator><creator>Collins, A. T.</creator><creator>Silva, F.</creator><creator>Pace, E.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>20050523</creationdate><title>Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration</title><author>De Sio, A. ; Achard, J. ; Tallaire, A. ; Sussmann, R. S. ; Collins, A. T. ; Silva, F. ; Pace, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-7419a29c536a090213b86424bf67c91b62345fde161163abd9bfc7ba7c9fb4993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Engineering Sciences</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>De Sio, A.</creatorcontrib><creatorcontrib>Achard, J.</creatorcontrib><creatorcontrib>Tallaire, A.</creatorcontrib><creatorcontrib>Sussmann, R. S.</creatorcontrib><creatorcontrib>Collins, A. T.</creatorcontrib><creatorcontrib>Silva, F.</creatorcontrib><creatorcontrib>Pace, E.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>De Sio, A.</au><au>Achard, J.</au><au>Tallaire, A.</au><au>Sussmann, R. S.</au><au>Collins, A. T.</au><au>Silva, F.</au><au>Pace, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration</atitle><jtitle>Applied physics letters</jtitle><date>2005-05-23</date><risdate>2005</risdate><volume>86</volume><issue>21</issue><spage>213504</spage><epage>213504-3</epage><pages>213504-213504-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Diamond has been identified as a very promising material for
X
and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond
500
μ
m
thick has been tested. Photoconductive measurements in coplanar and transverse configurations have been performed to characterize the device sensitivity in the 140-250 nm spectral range. Very high sensitivity values were achieved in both configurations. The sensitivity in the transverse configuration is at least 300 times higher than in the coplanar configuration.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1935039</doi></addata></record> |
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source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP Journals (American Institute of Physics) |
subjects | Engineering Sciences |
title | Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration |
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