Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

• Published in: Journal of optics (2010) 2020-08, Vol.22 (8), p.84002
• Main Authors: Balgarkashi, A, Ramanandan, S P, Tappy, N, Nahra, M, Kim, W, Güniat, L, Friedl, M, Morgan, N, Dede, D, Leran, J B, Couteau, C, Fontcuberta i Morral, A
• Format: Article
• Language: English
• Subjects: heterostructure; molecular beam epitaxy; nanowires; Physics; quantum dots; Quantum Physics
• ISSN: 2040-8978; 2040-8986
• DOI: 10.1088/2040-8986/ab9aad

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski-Krastanov growth mechanism. Here, we propose a novel strain-driven mechanism to form 3D In-rich clusters on the NW sidewalls and also on the NW top facets. The focus is on ternary InGaAs nanowire quantum dots which are particularly attractive for producing single photons at telecommunication wavelengths. In(Ga)As clusters were realized on the inclined top facets and also on the {11-2} corner facets of GaAs NW arrays by depositing InAs at a high growth temperature (630 °C). High-angle annular dark-field scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy confirms that the observed 3D clusters are indeed In-rich. The optical functionality of the as-grown samples was verified using optical technique of cathodoluminescence. Emission maps close to the NW tip shows the presence of optically active emission centers along the NW sidewalls. Our work illustrates how facets can be used to engineer the growth of localized emitters in semiconducting NWs.