Hot-carrier damage from high to low voltage using the energy-driven framework

In this work, we confirm that the energy is the driving force of Hot Carrier effects. When the energy is high, the Energy-driven framework allows to retrieve Lucky Electron Model-like equations. But when the energy is lowered, high energy electrons generated by Electron-Electron Scattering become th...

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Bibliographic Details
Published in:Microelectronic engineering 2007-09, Vol.84 (9), p.1938-1942
Main Authors: Guerin, C., Huard, V., Bravaix, A.
Format: Article
Language:English
Subjects:
Age function
Applied sciences
Electron-electron scattering
Electronics
Energy-driven
Engineering Sciences
Exact sciences and technology
Hot-carrier
MOS transistor
Multiple vibrationnal excitation
Reliability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:In this work, we confirm that the energy is the driving force of Hot Carrier effects. When the energy is high, the Energy-driven framework allows to retrieve Lucky Electron Model-like equations. But when the energy is lowered, high energy electrons generated by Electron-Electron Scattering become the dominant contribution to the degradation. For even lower energy Multiple Vibrational Excitation mechanism starts taking the lead.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2007.04.104