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Hot-carrier damage from high to low voltage using the energy-driven framework
In this work, we confirm that the energy is the driving force of Hot Carrier effects. When the energy is high, the Energy-driven framework allows to retrieve Lucky Electron Model-like equations. But when the energy is lowered, high energy electrons generated by Electron-Electron Scattering become th...
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Published in: | Microelectronic engineering 2007-09, Vol.84 (9), p.1938-1942 |
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container_end_page | 1942 |
container_issue | 9 |
container_start_page | 1938 |
container_title | Microelectronic engineering |
container_volume | 84 |
creator | Guerin, C. Huard, V. Bravaix, A. |
description | In this work, we confirm that the energy is the driving force of Hot Carrier effects. When the energy is high, the Energy-driven framework allows to retrieve Lucky Electron Model-like equations. But when the energy is lowered, high energy electrons generated by Electron-Electron Scattering become the dominant contribution to the degradation. For even lower energy Multiple Vibrational Excitation mechanism starts taking the lead. |
doi_str_mv | 10.1016/j.mee.2007.04.104 |
format | article |
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language | eng |
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source | ScienceDirect Journals |
subjects | Age function Applied sciences Electron-electron scattering Electronics Energy-driven Engineering Sciences Exact sciences and technology Hot-carrier MOS transistor Multiple vibrationnal excitation Reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
title | Hot-carrier damage from high to low voltage using the energy-driven framework |
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