Effect of pulsed methane gas flow on the incorporation of phosphorous in diamond

The synthesis of n-type phosphorus-doped diamond is essential for the development of diamond-based bipolar devices. Although demonstrated 20 years ago, it remains a complex problem due to low incorporation efficiency and low maximum concentrations. Previous works showed the deleterious influence of...

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Bibliographic Details
Published in:Diamond and related materials 2022-04, Vol.124, p.108928, Article 108928
Main Authors: Mortet, V., Taylor, A., Davydova, M., Lamač, M., Lambert, N., Elantyev, I., Lorinčík, J., Troadec, D., Vronka, M., Potocký, S.
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Diamond
Diamonds
Engineering Sciences
Gas flow
Incorporation
Methane
Microwave plasmas
Optical emission spectroscopy
PECVD
Phosphines
Phosphorus
Phosphorus doping
Plasma enhanced chemical vapor deposition
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Summary:The synthesis of n-type phosphorus-doped diamond is essential for the development of diamond-based bipolar devices. Although demonstrated 20 years ago, it remains a complex problem due to low incorporation efficiency and low maximum concentrations. Previous works showed the deleterious influence of methinophosphide formation in a methane/hydrogen/phosphine plasma on the growth of phosphorous doped diamond using the chemical vapor deposition method. In this work, we investigate the effect of pulsing methane during microwave plasma enhanced chemical vapor deposition to avoid the formation of HCP and to increase phosphorus incorporation efficiency and maximum concentration in diamond. [Display omitted] •Time-dependent optical emission spectroscopy study of hydrogen-phosphine plasma upon pulsed methane injection.•Increase of phosphorous incorporation in diamond using pulsed methane gas injection•Synthesis of diamond with a phosphorous concentration of 6 × 1020 at·cm−3
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2022.108928