Detailed electrical characterization of 200mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

• Published in: Solid-state electronics 2022-09, Vol.197
• Main Authors: Kim, Donghyun, Theodorou, C., Chanuel, A., Gobil, Y., Charles, M., Morvan, E., Woo Lee, Jae, Mouis, M., Ghibaudo, G.
• Format: Article
• Language: English
• Subjects: Engineering Sciences; Micro and nanotechnologies; Microelectronics
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2022.108448

A detailed electrical characterization and transistor parameter extraction on 200mm CMOS compatible GaN/Si HEMTs was performed down to deep cryogenic temperatures. The main transistor parameters (threshold voltage Vth, low-field mobility μ0, subthreshold swing SS, source-drain seriesresistance Rsd) were extracted in linear region using the Y-function and the Lambert-W function methods for gate lengths down to 0.1µm. The Y-function method was also employed in saturation region for the extraction of the saturation velocity. The results indicate that these GaN/Si HEMTdevices demonstrate a very good functionality down to very low temperature with improvement of mobility and subthreshold slope. It was also shown by TLM analysis that the source-drain series resistance Rsd is more limited by the contact resistance than by the 2DEG access region resistance astemperature is lowered