Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF 4 /O 2 and Ar plasmas

This article first presents quasi- in situ XPS measurements on Si 3 N 4 and a-Si samples after exposure to an SiF 4 /O 2 plasma at different cryogenic temperatures. A different behavior is observed between the two materials at −65 °C, which has led to the development of a time-multiplexed process fo...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2022-09, Vol.40 (5)
Main Authors: Antoun, Gaelle, Tillocher, Thomas, Girard, Aurélie, Lefaucheux, Philippe, Faguet, J., Kim, H., Zhang, D., Wang, M., Maekawa, K., Cardinaud, Christophe, Dussart, Rémi
Format: Article
Language:English
Subjects:
Chemical and Process Engineering
Engineering Sciences
Materials
Micro and nanotechnologies
Microelectronics
Plasmas
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Summary:This article first presents quasi- in situ XPS measurements on Si 3 N 4 and a-Si samples after exposure to an SiF 4 /O 2 plasma at different cryogenic temperatures. A different behavior is observed between the two materials at −65 °C, which has led to the development of a time-multiplexed process for nanoscale etching. This study clearly shows the possibility to switch from a deposition regime to an etching regime by decreasing the temperature. The threshold temperature between these regimes being different for both materials, it was possible to perform selective etching of Si 3 N 4 over a-Si by wisely choosing the temperature.
ISSN:0734-2101
DOI:10.1116/6.0001885