Influence of nanoscale faceting on the tunneling properties of near broken gap InAs AlGaSb heterojunctions grown by selective area epitaxy

We report on the selective area molecular beam epitaxy of InAs AlGaSb heterostructures on a GaSb (001) substrate. This method is used to realize Esaki tunnel diodes with a tunneling area down to 50 nm × 50 nm. The impact of the size reduction on the peak current density of the diode is investigated,...

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Bibliographic Details
Published in:Nanotechnology 2014-11, Vol.25 (46), p.465302-465302
Main Authors: Desplanque, L, Fahed, M, Han, X, Chinni, V K, Troadec, D, Chauvat, M-P, Ruterana, P, Wallart, X
Format: Article
Language:English
Subjects:
antimonides
Diodes
Dopants
Engineering Sciences
Esaki diode
Heterojunctions
Heterostructures
Indium arsenides
Molecular beam epitaxy
Physics
selective area epitaxy
Silicon
Tunneling
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Summary:We report on the selective area molecular beam epitaxy of InAs AlGaSb heterostructures on a GaSb (001) substrate. This method is used to realize Esaki tunnel diodes with a tunneling area down to 50 nm × 50 nm. The impact of the size reduction on the peak current density of the diode is investigated, and we show how the formation of the InAs facets can deeply affect the band-to-band tunneling properties of the heterostructure. This phenomenon is explained by the surface-dependent incorporation of Si dopant during growth.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/25/46/465302