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Water-soluble polyethylene-oxide polymer based memristive devices

In this research work, Conductive bridge Random Access memory devices (CBRAMs) featuring a water-solution processed Polyethylene Oxide (PEO) layer used as solid polymer electrolyte were fabricated. The devices showed promising results with forming-free capabilities, switching voltages within the ran...

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Bibliographic Details
Published in:Microelectronic engineering 2022-05, Vol.260, p.111806, Article 111806
Main Authors: Mahato, Prabir, Puyoo, Etienne, Pruvost, Sébastien, Deleruyelle, Damien
Format: Article
Language:English
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Summary:In this research work, Conductive bridge Random Access memory devices (CBRAMs) featuring a water-solution processed Polyethylene Oxide (PEO) layer used as solid polymer electrolyte were fabricated. The devices showed promising results with forming-free capabilities, switching voltages within the range from −1.5 V to 2.0 V, high OFF/ON resistance ratio ~ 105 and > 300 cycles each at 10 & 100 μA compliance current (CC). Cycling at various CC also confirmed that the conductive filament was more stable at higher compliance current with a higher probability to achieve non-volatile switching. This article also reports the conduction mechanism in the high and low resistance states for PEO based devices. Finally, due to their high OFF/ON current ratio, it is suggested that these devices could also serve as BEOL (Back-End-Of-Line) selector devices while operating in their volatile mode. [Display omitted] •A cost-effective polymer-based CBRAM has been developed with a small ecological footprint workable a low programming voltages.•The optimization thickness of the PEO layer ~150 nm, necessary for switching.•Study of its conduction mechanism in the two states- namely high & low resistance states•Electrical characterization achieving >300 cycles each at two different compliance current with resistance ratio > 104, and•Its potential application as BOEL selector devices.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2022.111806