Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

InGaN/GaN single quantum wells were grown by molecular beam epitaxy on the silicon substrate onto thin AlN and GaN buffer layers. The InGaN/GaN structure is porosified using a combination of SixNy nanomasking and sublimation and compared with a non-porous reference. The photoluminescence efficiency...

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Bibliographic Details
Published in:Journal of applied physics 2022-07, Vol.132 (3)
Main Authors: Damilano, B., Vézian, S., Chauvat, M. P., Ruterana, P., Amador-Mendez, N., Collin, S., Tchernycheva, M., Valvin, P., Gil, B.
Format: Article
Language:English
Subjects:
Applied physics
Buffer layers
Condensed Matter
Epitaxial growth
Gallium nitrides
Indium gallium nitrides
Materials Science
Molecular beam epitaxy
Photoluminescence
Physics
Quantum wells
Room temperature
Silicon substrates
Sublimation
Threading dislocations
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Summary:InGaN/GaN single quantum wells were grown by molecular beam epitaxy on the silicon substrate onto thin AlN and GaN buffer layers. The InGaN/GaN structure is porosified using a combination of SixNy nanomasking and sublimation and compared with a non-porous reference. The photoluminescence efficiency at room temperature of the porosified sample is improved by a factor reaching 40 compared with the reference sample. Plan-view and cross-sectional transmission electron microscopy images reveal that the remaining material is free of dislocation cores. The regions around dislocations are, thus, preferentially sublimated. This explains the strong photoluminescence improvement of nanoporous InGaN/GaN samples.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0089892