Role of pO2 and film microstructure on the memristive properties of La2NiO4+δ/LaNiO3−δ bilayers

LaNiO3/La2NiO4 bilayers deposited at varying pO2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO3/La2NiO4/Pt devices. The devices deposited at low pO2 showed the largest memristance. We propose this is...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2022-01, Vol.10 (12), p.6523-6530
Main Authors: Maas, Klaasjan, Wulles, Chloé, Caicedo Roque, Jose Manuel, Ballesteros, Belén, Lafarge, Valentin, Santiso, José, Burriel, Mónica
Format: Article
Language:English
Subjects:
Chemical Sciences
Depletion
Electric contacts
Electric fields
Lanthanum oxides
Material chemistry
Microstructure
Oxygen ions
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:LaNiO3/La2NiO4 bilayers deposited at varying pO2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO3/La2NiO4/Pt devices. The devices deposited at low pO2 showed the largest memristance. We propose this is due to the formation of a p-type Schottky contact between LaNiO3 and La2NiO4, where the extent of its carrier depletion width can be modulated by the electric-field induced drift of interstitial oxygen ions acting as mobile acceptor dopants in La2NiO4.
ISSN:2050-7488
2050-7496
DOI:10.1039/d1ta10296f