Effect of Ni, Bi and Se on the tetrahedrite formation

• Published in: RSC advances 2016-01, Vol.6 (14), p.12359-12367
• Main Authors: Gonçalves, António Pereira, Lopes, Elsa Branco, Villeroy, Benjamin, Monnier, Judith, Godart, Claude, Lenoir, Bertrand
• Format: Article
• Language: English
• Subjects: Chemical Sciences
• ISSN: 2046-2069; 2046-2069
• DOI: 10.1039/c6ra21482g

Materials based on Cu 12 Sb 4 S 13 tetrahedrites have been seen in recent years as promising materials for thermoelectric applications. However, the effect of small amounts of additional elements (used to tune the electrical transport properties) on the formation of the phases was not investigated. In this work we present such study, by means of powder X-ray diffraction, scanning electron microscopy complemented with energy-dispersive spectroscopy, and differential scanning calorimetry, using the Taguchi method to design the experiments. The effect of Ni, Bi and Se (i) in the volume percentage of tetrahedrite, (ii) in the temperature at which the Class III (tetrahedrite + chalcostibite + antimony → skinnerite) reaction occurs and (iii) in the final melting temperature of Cu 12− x Ni x Sb 4− y Bi y S 13− z Se z materials rapidly cooled from 950 °C was investigated. Se was observed to have a strong positive influence on the formation of tetrahedrite, while Ni and Bi were seen to promote the decrease of its volume percentage. A decrease of the Class III reaction and final melting temperatures was also observed after the introduction of Se, with Ni inducing the increase of the reaction and the decrease of the melting temperatures and Bi having only minor effects. The analysis of the microstructures indicate that high Ni concentrations lead to the first solidification of the NiS phase, while in the other compositions the (tetrahedrite/skinnerite) phase or mixtures of phases is first formed. Tetrahedrite formation is influenced positively by selenium and negatively by bismuth and nickel. However, selenium decreases the skinnerite formation temperature.