Planar CBRAM devices using non-cleanroom techniques as RF switches

This research article presents a novel technique to fabricate planar micro gap ( 10 6 , high maximum isolation (− 60 dB), low insertion loss (− 0.2 dB) and a figure of merit of 2.65 THz. Finally, images with optical microscope are presented which give evidence to the switching phenomena in these mic...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2023-06, Vol.129 (6), Article 438
Main Authors: Mahato, Prabir, Jayakrishnan, Methapettyparambu Purushothama, Vena, Arnaud, Perret, Etienne
Format: Article
Language:English
Subjects:
Applied physics
Characterization and Evaluation of Materials
Cleanrooms
Condensed Matter Physics
Devices
Electroplating
Engineering Sciences
Figure of merit
Insertion loss
Laser applications
Low resistance
Machines
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Optical microscopes
Optimization
Physics
Physics and Astronomy
Processes
Spin coating
Surfaces and Interfaces
Sustainable development
Switches
Thin Films
Waveforms
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Summary:This research article presents a novel technique to fabricate planar micro gap ( 10 6 , high maximum isolation (− 60 dB), low insertion loss (− 0.2 dB) and a figure of merit of 2.65 THz. Finally, images with optical microscope are presented which give evidence to the switching phenomena in these micro-gap devices. To conclude, this non-clean room approach, as it simplifies the fabrication process, lowers the cost and energy of production and is a potential candidate for sustainable development for RF switches and devices.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-023-06687-x