Silicon diffusion in AlN

• Published in: Journal of applied physics 2023-09, Vol.134 (9)
• Main Authors: Bonito Oliva, V., Mangelinck, D., Hagedorn, S., Bracht, H., Irmscher, K., Hartmann, C., Vennéguès, P., Albrecht, M.
• Format: Article
• Language: English
• Subjects: Aluminum; Applied physics; Bulk density; Chemical Sciences; Depth profiling; Diffusion coefficient; Dislocation density; Electric fields; Enthalpy; Free energy; Heat of formation; Ions; Isothermal annealing; Lattice sites; Physics; Secondary ion mass spectrometry; Silicon; Temperature dependence
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/5.0159641

In this study, we investigate the diffusion of Si donors in AlN. Amorphous S i 1 − x N x sputtered on the surface of bulk AlN with low dislocation density is used as a Si source. The diffusion experiments are conducted through isochronal and isothermal annealing in a protective N2 atmosphere at temperatures between 1500 and 1700 °C. The Si depth profiles measured by secondary ion mass spectrometry exhibit a convex box-like shape with a steep diffusion front. These concentration profiles are best described with a diffusion coefficient that depends on the square of local Si concentration. From the characteristic box-shaped Si profiles, we conclude that diffusion of Si in AlN is mediated by singly negatively charged dopant–vacancy pairs S i Al V Al −. The strong concentration dependence of Si diffusion is due to the electric field associated with the incorporation of Si donors ( Si Al + 1 ) on substitutional Al lattice sites and reflects that Si is fully electrically active at diffusion temperature. The experimentally obtained extrinsic Si diffusion coefficient is reduced to intrinsic doping conditions. The temperature dependence of Si diffusion for intrinsic conditions is described by an activation enthalpy of ( 10.34 ± 0.32 ) eV and a pre-exponential factor of 235 − 203 + 1485 c m 2 s − 1. The migration enthalpy of the donor–vacancy pair S i Al V Al − is estimated to be around 3.5 eV. This estimation is based on the activation enthalpy of the transport capacity of S i Al V Al − and theoretical results concerning the formation energy of negatively charged vacancies on Al-sites in AlN.