Direct Observation of a β -SiC(100)- c ( 4 × 2 ) Surface Reconstruction

We provide the first direct observation of a b-SiCs100d-cs4 3 2d surface reconstruction. The experiments are performed using high-resolution scanning tunneling microscopy (STM). Flat surfaces having a long range order are grown. Individual Si dimers are identified and form a centered pseudohexagonal...

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Bibliographic Details
Published in:Physical review letters 1997-02, Vol.78 (5), p.907-910
Main Authors: Soukiassian, P., Semond, F., Douillard, L., Mayne, A., Dujardin, G., Pizzagalli, L., Joachim, C.
Format: Article
Language:English
Subjects:
Physics
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Summary:We provide the first direct observation of a b-SiCs100d-cs4 3 2d surface reconstruction. The experiments are performed using high-resolution scanning tunneling microscopy (STM). Flat surfaces having a long range order are grown. Individual Si dimers are identified and form a centered pseudohexagonal pattern give a cs4 3 2d array. Further support for Si-dimer identification is provided by theoretical STM image calculations. The results suggest a model of dimer rows having alternatively up and down dimers (AUDD) within the row, in an “undulating” type of arrangement reducing the surface stress. Hence the b-SiCs100d- and Sis100d-cs4 3 2d surface reconstructions are very different.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.78.907