Monte Carlo modelling of Schottky diode for rectenna simulation

•Weight of tunneling and thermionic current in a Schottky Diode simulated with a 1D Monte Carlo solver.•Comparison of different extraction methods on the parameters of the electrical model.•Impact of the non-linear ideality factor, saturation current and series resistance on the performance of a rec...

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Bibliographic Details
Published in:Solid-state electronics 2017-09, Vol.135, p.71-77
Main Authors: Bernuchon, E., Aniel, F., Zerounian, N., Grimault-Jacquin, A.S.
Format: Article
Language:English
Subjects:
Electronics
Engineering Sciences
Harmonic Balance (HB) simulation
Image force (IF)
Micro and nanotechnologies
Microelectronics
Monte-Carlo (MC)
Parameters extraction
Schottky diode
Tunneling
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Summary:•Weight of tunneling and thermionic current in a Schottky Diode simulated with a 1D Monte Carlo solver.•Comparison of different extraction methods on the parameters of the electrical model.•Impact of the non-linear ideality factor, saturation current and series resistance on the performance of a rectifier circuit. Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2017.06.031