Thermoelectric power in undoped hydrogenated polymorphous silicon

Thermoelectric power and conductivity measurements have been made as a function of temperature on a new nanostructured material, hydrogenated polymorphous silicon (pm-Si:H). The thermoelectric power is negative, so electrons are the dominant carriers. The activation energy of the thermopower is less...

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Bibliographic Details
Published in:Thin solid films 2000-05, Vol.366 (1), p.207-210
Main Authors: Meaudre, R., Meaudre, M., Butté, R., Vignoli, S.
Format: Article
Language:English
Subjects:
Amorphous materials
Electrical properties and measurements
Electronics
Optics and opto-electronics
Physics
Silicon
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Summary:Thermoelectric power and conductivity measurements have been made as a function of temperature on a new nanostructured material, hydrogenated polymorphous silicon (pm-Si:H). The thermoelectric power is negative, so electrons are the dominant carriers. The activation energy of the thermopower is less than that of the dark conductivity. However, the short-circuit Seebeck current activation energy agrees with the conductivity-activation energy. These results are consistent with a model involving long-ranged fluctuations at the mobility edges. The magnitude of the fluctuations is larger than that measured in highly-doped hydrogenated amorphous silicon (a-Si:H) in relation to the peculiar structure of pm-Si:H.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(00)00742-2