A new technique for fullerene onion formation

We present an original technique for growing large fullerene onions: carbon-ion implantation at high temperature into copper substrates. Used for carbon film growth (diamond or turbostratic carbon), this method is based on the immiscibility of carbon into copper and can produce an important density...

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Bibliographic Details
Published in:Journal of materials science 1995-10, Vol.30 (19), p.4787-4792
Main Authors: DABIOC'H, T, RIVIERE, J. P, DELAFOND, J
Format: Article
Language:English
Subjects:
Applied sciences
Clusters, nanoparticles, and nanocrystalline materials
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in other materials
Exact sciences and technology
Fullerenes and fullerene-related materials
Metals. Metallurgy
Physics
Structure of solids and liquids
crystallography
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Summary:We present an original technique for growing large fullerene onions: carbon-ion implantation at high temperature into copper substrates. Used for carbon film growth (diamond or turbostratic carbon), this method is based on the immiscibility of carbon into copper and can produce an important density of giant carbon onions with size up to some micrometers which is the largest size observed up to now. We characterize these giant fullerenes by TEM, HRTEM, and for the first time with AFM. On the basis of both experimental and numerical results we propose a mechanism of formation of the carbon onions during the implantation process. (Author)
ISSN:0022-2461
1573-4803
DOI:10.1007/BF01154486