Long indium-rich InGaAs nanowires by SAG-HVPE

We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 m h and high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy gi...

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Bibliographic Details
Published in:Nanotechnology 2024-02, Vol.35 (19), p.195601
Main Authors: Chereau, Emmanuel, Grégoire, Gabin, Avit, Geoffrey, Taliercio, Thierry, Staudinger, Philipp, Schmid, Heinz, Bougerol, Catherine, Trassoudaine, Agnès, Gil, Evelyne, LaPierre, Ray R, André, Yamina
Format: Article
Language:English
Subjects:
epitaxy
growth
HVPE
InGaAs
nanowires
Physics
selective area growth
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Summary:We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 m h and high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy giving an average indium composition of 84%. This is consistent with the composition of 78% estimated from the photoluminescence spectrum of the NWs. Crystal structure analysis of the NWs by transmission electron microscopy indicated random stacking faults related to zinc-blende/wurtzite polytypism. This work demonstrates the ability of HVPE for growing high aspect ratio InGaAs NW arrays.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/ad263a