A nanoscale study of hafnium oxide resistive memory switching dynamics

This paper deals with the set and reset time measurements of a resistive memory consisting of a Ti/TiN/HfO 2 layer stack contacted with the tip of a conductive atomic force microscope in ultra high vacuum. We present measurements of the set and reset switching times in voltage pulse regime for diffe...

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Published in:Journal of physics. D, Applied physics Applied physics, 2024-05, Vol.57 (21), p.215106
Main Authors: Blonkowski, S, BenYoussef, M, Kogelschatz, M
Format: Article
Language:English
Subjects:
hafnium
memory
nanoscale
oxide
Physics
resistive
switchings
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BenYoussef, M
Kogelschatz, M
description This paper deals with the set and reset time measurements of a resistive memory consisting of a Ti/TiN/HfO 2 layer stack contacted with the tip of a conductive atomic force microscope in ultra high vacuum. We present measurements of the set and reset switching times in voltage pulse regime for different voltages and compliance currents. The experimental results are well reproduced by simulation. We derive analytical expressions for the set and reset times as function of experimental conditions. The effect of voltage and current on reset and set switching times is then discussed with the help of their analytical expressions, which are also applied on standard devices characteristics.
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subjects hafnium
memory
nanoscale
oxide
Physics
resistive
switchings
title A nanoscale study of hafnium oxide resistive memory switching dynamics
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