Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)“ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML">16×2</mml:math> ” surfaces

• Published in: Physical review. B 2019, Vol.100 (7)
• Main Authors: Lewis, N K, Lassailly, Yves, Martinelli, L, Vobornik, I, Fujii, J, Bigi, C, Brunkow, E, Clayburn, N B, Gay, T J, Flavell, W R, Seddon, E A
• Format: Article
• Language: English
• Subjects: Chemical Physics; Condensed Matter; Physics
• ISSN: 2469-9950; 2469-9969
• DOI: 10.1103/physrevb.100.075302

The electronic structure of Si(110)“16×2” double-domain, single-domain, and 1×1 surfaces have beeninvestigated using spin- and angle-resolved photoemission at sample temperatures of 77K and 300K. Angle-resolved photoemission was conducted using horizontally and vertically polarized 60 eV and 80 eV photons.Band-dispersion maps revealed four surface states (S1 to S4) which were assigned to silicon dangling bonds onthe basis of measured binding energies and photoemission intensity changes between horizontal and verticallight polarizations. Three surface states (S1, S2, and S4), observed in the Si(110)“16×2” reconstruction, wereassigned to Si adatoms and Si atoms present at the edges of the corrugated terrace structure. Only one of thefour surface states, S3, was observed in both the Si(110)“16×2” and 1×1 band maps and consequently attributedto the pervasive Si zigzag chains that are components of both the Si(110)“16×2” and 1×1 surfaces. A statein the bulk-band region was attributed to an in-plane bond. All data were consistent with the adatom-bucklingmodel of the Si(110)“16×2” surface. Whilst room temperature measurements of Py and Pz were statisticallycompatible with zero, Px measurements of the enantiomorphic A-type and B-type Si(110)“16×2” surfaces gavesmall average polarizations of around 1.5% that were opposite in sign. Further measurements at 77K on A-typeSi(110)“16×2” surfaces gave a smaller value of +0.3%. An upper limit of ∼1% may thus be taken for thelongitudinal polarization.