KNN lead-free technology on 200 mm Si wafer for piezoelectric actuator applications

State-of-the-art (K,Na)NbO3 (KNN) films were integrated into MEMS actuator devices in a 200 mm silicon wafer technology environment following industry compatible process. The ferroelectric, dielectric and piezoelectric properties of KNN films with a thickness of 1 µm and 1.9 µm integrated into capac...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2024-07, Vol.372, p.115370, Article 115370
Main Authors: Kuentz, Hugo, Dieppedale, Christel, Mollard, Laurent, Liechti, Romain, Campo, Alain, Hamelin, Antoine, Demange, Valérie, Poulain, Christophe, Guilloux-Viry, Maryline, Le Rhun, Gwenaël
Format: Article
Language:English
Subjects:
Actuator
Chemical Sciences
KNN
Lead-free
MEMS
Piezoelectric
Thin film
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Summary:State-of-the-art (K,Na)NbO3 (KNN) films were integrated into MEMS actuator devices in a 200 mm silicon wafer technology environment following industry compatible process. The ferroelectric, dielectric and piezoelectric properties of KNN films with a thickness of 1 µm and 1.9 µm integrated into capacitors were assessed throughout the whole 200 mm wafers. The actuator behavior was highlighted through electromechanical measurements on KNN based devices such as cantilever beams and membranes. KNN was eventually used to actuate micro-mirrors, one of the main piezoMEMS components that may drive the market in the near future. The results demonstrate that KNN technology is promising for replacing lead content PZT technology in piezoelectric MEMS industry. [Display omitted] •Integration of (K,Na)NbO3 (KNN) thin films in a 200 mm silicon wafer technology environment•Fabrication and characterization of KNN-based ferroelectric/piezoelectric devices•Demonstration of the high potential of KNN in actuator mode devices, including micro-mirrors•KNN technology, a possible promising alternative to lead content Pb(Zr,Ti)O3 in MEMS industry
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2024.115370