Precise Alkali Supply during and after Growth for High‐Performance Low Bandgap (Ag,Cu)InSe 2 Solar Cells

• Published in: Solar RRL 2024-05, Vol.8 (10)
• Main Authors: Krause, Maximilian, Moser, Simon, Mitmit, Ceren, Nishiwaki, Shiro, Tiwari, Ayodhya N., Carron, Romain
• Format: Article
• Language: English
• Subjects: Engineering Sciences
• ISSN: 2367-198X; 2367-198X
• DOI: 10.1002/solr.202400077

Alkali treatments are crucial for low bandgap (Ag,Cu)InSe 2 (ACIS) and Cu(In,Ga)Se 2 ‐based solar cell performance. Traditionally, Ag‐alloying of CIS (ACIS) is grown on soda‐lime glass (SLG) at temperatures exceeding 500 °C, resulting in uncontrolled alkali diffusion from the substrate and variable photovoltaic properties. A substrate‐independent low‐bandgap ACIS growth process is introduced and the impact of controlled supplies of NaF and RbF alkali fluorides before and after absorber growth through precursor layers and post‐deposition treatments (PDT) are investigated. NaF and RbF precursor layers enhance carrier lifetimes and doping density, outperforming the previous SLG‐dependent strategy. Even small quantities of RbF significantly enhance device performance, while specific NaF amount during deposition are necessary to limit grain growth and achieve high doping densities and lifetimes. A certain density of grain boundaries appears crucial for high doping levels. Although subsequent NaF post‐deposition treatment (PDT) does not provide additional benefits with sufficient Na during growth, RbF‐PDT remains crucial. The best performance is achieved with a combination of NaF and RbF precursor layers along with RbF‐PDT, resulting in over 19% efficiency, 605 mV open‐circuit voltage ( V OC ), 73% fill factor (FF), a carrier density of 3 × 10 16 cm −3 , and a 700 ns lifetime. This approach supports high‐efficiency ACIS solar cell advancement, particularly for thin‐film tandem photovoltaic devices.