Voltage‐Driven Fluorine Motion for Novel Organic Spintronic Memristor

• Published in: Advanced materials (Weinheim) 2024-08, Vol.36 (33), p.e2401611-n/a
• Main Authors: Nachawaty, Abir, Chen, Tongxin, Ibrahim, Fatima, Wang, Yuchen, Hao, Yafei, Dalla Francesca, Kevin, Tyagi, Priyanka, Da Costa, Antonio, Ferri, Anthony, Liu, Chuanchuan, Li, Xiaoguang, Chshiev, Mairbek, Migot, Sylvie, Badie, Laurent, Jahjah, Walaa, Desfeux, Rachel, Le Breton, Jean‐Christophe, Schieffer, Philippe, Le Pottier, Arnaud, Gries, Thomas, Devaux, Xavier, Lu, Yuan
• Format: Article
• Language: English
• Subjects: Chemical Sciences; Dipoles; Electric potential; Ferroelectricity; Fluorine; Inorganic chemistry; Langmuir‐Blodgett; Magnetoresistance; Magnetoresistivity; Memory devices; memristor; Memristors; neuromorphic computation; Physics; Polarization (spin alignment); poly(vinylidene fluoride); Polyvinylidene fluorides; spin polarization; Tunnel junctions; tunneling magnetoresistance; Vinylidene fluoride; Voltage
• ISSN: 0935-9648; 1521-4095; 1521-4095
• DOI: 10.1002/adma.202401611

Integrating tunneling magnetoresistance (TMR) effect in memristors is a long‐term aspiration because it allows to realize multifunctional devices, such as multi‐state memory and tunable plasticity for synaptic function. However, the reported TMR in different multiferroic tunnel junctions is limited to 100%. This work demonstrates a giant TMR of −266% in La0.6Sr0.4MnO3(LSMO)/poly(vinylidene fluoride)(PVDF)/Co memristor with thin organic barrier. Different from the ferroelectricity‐based memristors, this work discovers that the voltage‐driven florine (F) motion in the junction generates a huge reversible resistivity change up to 106% with nanosecond (ns) timescale. Removing F from PVDF layer suppresses the dipole field in the tunneling barrier, thereby significantly enhances the TMR. Furthermore, the TMR can be tuned by different polarizing voltage due to the strong modification of spin‐polarization at the LSMO/PVDF interface upon F doping. Combining of high TMR in the organic memristor paves the way to develop high‐performance multifunctional devices for storage and neuromorphic applications. This work discovers the voltage‐driven fluorine (F) motion in the La0.6Sr0.4MnO3(LSMO)/poly(vinylidene fluoride) (PVDF)/Co junction, which can generate a huge reversible resistivity change up to 106% with ns timescale upon polarizing voltage. Removing F from PVDF layer also significantly enhances the tunneling magnetoresistance, paving the way to develop multifunctional organic spintronic memristor for storage and neuromorphic applications.