Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs

In this work, fully vertical GaN trench MOSFETs were fabricated and characterized to evaluate their electrical performances. Transistors show a normally-OFF behavior with a high I[sub.ON]/I[sub.OFF] (~10[sup.9]) ratio and a significantly small gate leakage current (10[sup.−11] A/mm). Thanks to an im...

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Bibliographic Details
Published in:Electronics (Basel) 2024-06, Vol.13 (12), p.2350
Main Authors: Ackermann, Valentin, Mohamad, Blend, El Rammouz, Hala, Maurya, Vishwajeet, Frayssinet, Eric, Cordier, Yvon, Charles, Matthew, Lefevre, Gauthier, Buckley, Julien, Salem, Bassem
Format: Article
Language:English
Subjects:
Current leakage
Electric fields
Engineering Sciences
Etching
Gallium nitrate
Gallium nitrides
Leakage current
Liquors
Metal oxide semiconductor field effect transistors
Methods
MOSFETs
Nitrides
Partitioning
Transistors
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Summary:In this work, fully vertical GaN trench MOSFETs were fabricated and characterized to evaluate their electrical performances. Transistors show a normally-OFF behavior with a high I[sub.ON]/I[sub.OFF] (~10[sup.9]) ratio and a significantly small gate leakage current (10[sup.−11] A/mm). Thanks to an improved resistance partitioning method, the resistances of the trench bottom and trench channel were extracted accurately by taking into account different charging conditions. This methodology enabled an estimation of the effective channel and bottom mobility of 11.1 cm[sup.2]/V·s and 15.1 cm[sup.2]/V·s, respectively.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics13122350