Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs

In this work, fully vertical GaN trench MOSFETs were fabricated and characterized to evaluate their electrical performances. Transistors show a normally-OFF behavior with a high I[sub.ON]/I[sub.OFF] (~10[sup.9]) ratio and a significantly small gate leakage current (10[sup.−11] A/mm). Thanks to an im...

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Published in:Electronics (Basel) 2024-06, Vol.13 (12), p.2350
Main Authors: Ackermann, Valentin, Mohamad, Blend, El Rammouz, Hala, Maurya, Vishwajeet, Frayssinet, Eric, Cordier, Yvon, Charles, Matthew, Lefevre, Gauthier, Buckley, Julien, Salem, Bassem
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Language:English
Subjects:
Current leakage
Electric fields
Engineering Sciences
Etching
Gallium nitrate
Gallium nitrides
Leakage current
Liquors
Metal oxide semiconductor field effect transistors
Methods
MOSFETs
Nitrides
Partitioning
Transistors
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container_issue 12
container_start_page 2350
container_title Electronics (Basel)
container_volume 13
creator Ackermann, Valentin
Mohamad, Blend
El Rammouz, Hala
Maurya, Vishwajeet
Frayssinet, Eric
Cordier, Yvon
Charles, Matthew
Lefevre, Gauthier
Buckley, Julien
Salem, Bassem
description In this work, fully vertical GaN trench MOSFETs were fabricated and characterized to evaluate their electrical performances. Transistors show a normally-OFF behavior with a high I[sub.ON]/I[sub.OFF] (~10[sup.9]) ratio and a significantly small gate leakage current (10[sup.−11] A/mm). Thanks to an improved resistance partitioning method, the resistances of the trench bottom and trench channel were extracted accurately by taking into account different charging conditions. This methodology enabled an estimation of the effective channel and bottom mobility of 11.1 cm[sup.2]/V·s and 15.1 cm[sup.2]/V·s, respectively.
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subjects Current leakage
Electric fields
Engineering Sciences
Etching
Gallium nitrate
Gallium nitrides
Leakage current
Liquors
Metal oxide semiconductor field effect transistors
Methods
MOSFETs
Nitrides
Partitioning
Transistors
title Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs
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