The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics

Among materials produced as colloidal quantum dots (CQDs), HgTe has a special status being the only material covering the whole infrared range from the visible to the THz (0.7–100 µm). This unique property resulting from its electronic structure, combined with an air stability and a capacity for cha...

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Bibliographic Details
Published in:Advanced functional materials 2024-09, Vol.34 (39), p.n/a
Main Authors: Sergeeva, Kseniia A., Zhang, Huichen, Portniagin, Arsenii S., Bossavit, Erwan, Mu, Ge, Kershaw, Stephen V., Ithurria, Sandrine, Guyot‐Sionnest, Philippe, Keuleyan, Sean, Delerue, Christophe, Tang, Xin, Rogach, Andrey L., Lhuillier, Emmanuel
Format: Article
Language:English
Subjects:
camera
Charge materials
Colloids
Electronic structure
HgTe
infrared
Infrared detectors
light resonator
modelling
nanoparticle growth
Optoelectronic devices
optoelectronics
Photonics
Physics
Quantum dots
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Summary:Among materials produced as colloidal quantum dots (CQDs), HgTe has a special status being the only material covering the whole infrared range from the visible to the THz (0.7–100 µm). This unique property resulting from its electronic structure, combined with an air stability and a capacity for charge conduction has generated consistent and massive efforts to produce and improve HgTe CQDs over the past two decades. Meanwhile, HgTe CQDs offer an infrared platform more advanced than any other colloidal alternatives in the mid‐wave infrared regarding their integration into advanced photonic and optoelectronic applications. Here, the latest developments of HgTe CQDs relative to the material's growth, electron structure modelling, its integration into photonic structures and its transfer as the active material from single element devices toward complex sensors and infrared imagers are reviewed. Finally, a discussion about the potential of this material for industry, rising new challenges beyond economical and production considerations at low technological readiness level, relative to the material and device design, is also included. HgTe nanocrystals appear as a unique platform for infrared optoelectronics combining both broadband spectral tunability, photoconductivity and light emission properties in the whole infrared range. This review discusses how the most recent developments relative to material and electronic properties have enabled advanced integration into devices.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202405307