Planar CBRAM devices using non-cleanroom techniques as RF switches

This research article presents a novel technique to fabricate planar micro gap (10 6 , high maximum isolation (-60 dB), low insertion loss (-0.2 dB) and a figure of merit (FoM) of 2.65 THz. Finally, images with optical microscope are presented which give evidence to the switching phenomena in these...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2023-05, Vol.129 (6)
Main Authors: Mahato, Prabir, Jayakrishnan, Methapettyparambu Purushothama, Vena, Arnaud, Perret, Etienne
Format: Article
Language:English
Subjects:
Engineering Sciences
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This research article presents a novel technique to fabricate planar micro gap (10 6 , high maximum isolation (-60 dB), low insertion loss (-0.2 dB) and a figure of merit (FoM) of 2.65 THz. Finally, images with optical microscope are presented which give evidence to the switching phenomena in these micro gap devices. To conclude, this non-clean room approach, as it simplifies the fabrication process, lowers the cost and energy of production and is a potential candidate for sustainable development for RF switches and devices.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-023-06687-x