Photofield emission from a tipped silicon photocathode in IR with a new picosecond Nd–YAG laser at a frequency of 100 MHz

Tipped silicon photocathodes are tested with the IR wavelength (1.064 μm) of a new lock-mode Nd–YAG laser. The impulse width of 30 ps is repeated at a frequency of 100 MHz at a power of 122 W. A quantum yield of 2.5×10 −3 is obtained in a DC gun using the best continuous emission field of 20 MV/m fo...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2000-12, Vol.455 (2), p.405-411
Main Authors: Barthélémy, A, Bourliaguet, B, Couderc, V, Dupont, M, Froehly, C, Gardès, J, Jaber, Z, Louradour, F, Querrou, M
Format: Article
Language:English
Subjects:
Instrumentation and Detectors
Nd-YAG at its 1st harmonic
Photocathode
Photofield emission
Physics
Picosecond laser at 100 MHz
Silicon tips
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Summary:Tipped silicon photocathodes are tested with the IR wavelength (1.064 μm) of a new lock-mode Nd–YAG laser. The impulse width of 30 ps is repeated at a frequency of 100 MHz at a power of 122 W. A quantum yield of 2.5×10 −3 is obtained in a DC gun using the best continuous emission field of 20 MV/m for the photofield emission current. The ratio of the photofield emission current to the field emission current (dark current) is more than 10 4. A previous experiment with the second harmonic of a Nd–YAG at 10 Hz gave 700 pC per pulse of 35 ps width with a quantum yield of 10 −5 at the threshold emission field of 7.5 MV/m.
ISSN:0168-9002
1872-9576
DOI:10.1016/S0168-9002(00)00519-2