L-H interface improvement for ultra-high-efficiency Si solar cells

Several phenomena normally considered separately are taken into account simultaneously to model a new solar-cell structure. A planar substructure inserted in the cell emitter is provided at its faces with two L-H interfaces which modify recombination mechanisms inside the accumulation layers. The th...

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Bibliographic Details
Published in:Journal of applied physics 1993, Vol.74 (3), p.2058-2063
Main Author: KUZNICKI, Z. T
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Instrumentation and Detectors
Natural energy
Photovoltaic conversion
Physics
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:Several phenomena normally considered separately are taken into account simultaneously to model a new solar-cell structure. A planar substructure inserted in the cell emitter is provided at its faces with two L-H interfaces which modify recombination mechanisms inside the accumulation layers. The theoretical modelization and one-dimensional numerical simulation show its yield to be 35%–40%. In practice, fabrication would necessitate uniting recent technological advances in the same fine substructure to ensure: (i) absorption of low-energy photons; (ii) optical confinement of the infrared light; and (iii) formation of the L-H interfaces at its edges.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.354770