Helium behavior in α-SiC ceramics investigated by NRA technique

The mechanisms involved in helium migration in α-SiC are investigated through the evolution of its microstructure and of the concentration profiles following annealing at 1300°C/30min for fluences of 1 and 5×10153Hecm−2 and a He implantation energy of 500keV. Helium profiling is performed using the...

Full description

Saved in:
Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.231-235
Main Authors: Sauvage, T., Carlot, G., Martin, G., Vincent, L., Garcia, P., Barthe, M.F., Gentils, A., Desgardin, P.
Format: Article
Language:English
Subjects:
Condensed Matter
Depth profiling
Diffusion
Helium
Implantation
Materials Science
NRA
Physics
TEM
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The mechanisms involved in helium migration in α-SiC are investigated through the evolution of its microstructure and of the concentration profiles following annealing at 1300°C/30min for fluences of 1 and 5×10153Hecm−2 and a He implantation energy of 500keV. Helium profiling is performed using the 3He(d,α)1H NRA technique with an improved detection limit of 5atppm. The NRA and TEM techniques clearly show that depending on the initial fluence, a proportion of the helium is trapped within the grain and a part of the helium is released. Analysis of the helium profile changes after annealing enabled to determine a value of the volume diffusion coefficient close to (8±1)×10−17m2s−1 for both fluences studied.
ISSN:0168-583X
1872-9584
1872-9584
0168-583X
DOI:10.1016/j.nimb.2007.01.006