Helium behavior in α-SiC ceramics investigated by NRA technique

The mechanisms involved in helium migration in α-SiC are investigated through the evolution of its microstructure and of the concentration profiles following annealing at 1300°C/30min for fluences of 1 and 5×10153Hecm−2 and a He implantation energy of 500keV. Helium profiling is performed using the...

Full description

Saved in:
Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.231-235
Main Authors: Sauvage, T., Carlot, G., Martin, G., Vincent, L., Garcia, P., Barthe, M.F., Gentils, A., Desgardin, P.
Format: Article
Language:English
Subjects:
Condensed Matter
Depth profiling
Diffusion
Helium
Implantation
Materials Science
NRA
Physics
TEM
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c336t-fdd2b5b74a519a27ebbb7e0cebeaf45db1f8fa77dabbd9f8adf02aecdd09d12c3
cites cdi_FETCH-LOGICAL-c336t-fdd2b5b74a519a27ebbb7e0cebeaf45db1f8fa77dabbd9f8adf02aecdd09d12c3
container_end_page 235
container_issue 1-2
container_start_page 231
container_title Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
container_volume 257
creator Sauvage, T.
Carlot, G.
Martin, G.
Vincent, L.
Garcia, P.
Barthe, M.F.
Gentils, A.
Desgardin, P.
description The mechanisms involved in helium migration in α-SiC are investigated through the evolution of its microstructure and of the concentration profiles following annealing at 1300°C/30min for fluences of 1 and 5×10153Hecm−2 and a He implantation energy of 500keV. Helium profiling is performed using the 3He(d,α)1H NRA technique with an improved detection limit of 5atppm. The NRA and TEM techniques clearly show that depending on the initial fluence, a proportion of the helium is trapped within the grain and a part of the helium is released. Analysis of the helium profile changes after annealing enabled to determine a value of the volume diffusion coefficient close to (8±1)×10−17m2s−1 for both fluences studied.
doi_str_mv 10.1016/j.nimb.2007.01.006
format article
fullrecord <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_in2p3_00169581v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0168583X0700016X</els_id><sourcerecordid>oai_HAL_in2p3_00169581v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c336t-fdd2b5b74a519a27ebbb7e0cebeaf45db1f8fa77dabbd9f8adf02aecdd09d12c3</originalsourceid><addsrcrecordid>eNp9kNtKAzEQhoMoWKsv4FXuZdck2z2BF5aiVigKHsC7kMPETunuarJd6GP5Ij6TKRUvnZuB4fsG_p-Qc85SznhxuUpbbHQqGCtTxlPGigMy4lUpkjqvJodkFKEqyavs7ZichLBicfIsH5HrOaxx01ANSzVg5ym29PsrecYZNeBVgybE0wChx3fVg6V6Sx-eprQHs2zxcwOn5MipdYCz3z0mr7c3L7N5sni8u59NF4nJsqJPnLVC57qcqJzXSpSgtS6BGdCg3CS3mrvKqbK0Smtbu0pZx4QCYy2rLRcmG5OL_d-lWssPj43yW9kplPPpQmIrPjLJYsgYlw880mJPG9-F4MH9KZzJXWNyJXeNyV1jkvHoFlG62ksQcwwIXgaD0Bqw6MH00nb4n_4DAih2UQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Helium behavior in α-SiC ceramics investigated by NRA technique</title><source>ScienceDirect Freedom Collection</source><creator>Sauvage, T. ; Carlot, G. ; Martin, G. ; Vincent, L. ; Garcia, P. ; Barthe, M.F. ; Gentils, A. ; Desgardin, P.</creator><creatorcontrib>Sauvage, T. ; Carlot, G. ; Martin, G. ; Vincent, L. ; Garcia, P. ; Barthe, M.F. ; Gentils, A. ; Desgardin, P.</creatorcontrib><description>The mechanisms involved in helium migration in α-SiC are investigated through the evolution of its microstructure and of the concentration profiles following annealing at 1300°C/30min for fluences of 1 and 5×10153Hecm−2 and a He implantation energy of 500keV. Helium profiling is performed using the 3He(d,α)1H NRA technique with an improved detection limit of 5atppm. The NRA and TEM techniques clearly show that depending on the initial fluence, a proportion of the helium is trapped within the grain and a part of the helium is released. Analysis of the helium profile changes after annealing enabled to determine a value of the volume diffusion coefficient close to (8±1)×10−17m2s−1 for both fluences studied.</description><identifier>ISSN: 0168-583X</identifier><identifier>ISSN: 1872-9584</identifier><identifier>EISSN: 1872-9584</identifier><identifier>EISSN: 0168-583X</identifier><identifier>DOI: 10.1016/j.nimb.2007.01.006</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Condensed Matter ; Depth profiling ; Diffusion ; Helium ; Implantation ; Materials Science ; NRA ; Physics ; TEM</subject><ispartof>Nuclear instruments &amp; methods in physics research. Section B, Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.231-235</ispartof><rights>2007 Elsevier B.V.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-fdd2b5b74a519a27ebbb7e0cebeaf45db1f8fa77dabbd9f8adf02aecdd09d12c3</citedby><cites>FETCH-LOGICAL-c336t-fdd2b5b74a519a27ebbb7e0cebeaf45db1f8fa77dabbd9f8adf02aecdd09d12c3</cites><orcidid>0000-0001-7173-769X ; 0000-0001-6563-2728 ; 0000-0002-1678-3535 ; 0000-0002-0170-9498 ; 0000-0002-6318-9336 ; 0000-0001-8100-2187</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://in2p3.hal.science/in2p3-00169581$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Sauvage, T.</creatorcontrib><creatorcontrib>Carlot, G.</creatorcontrib><creatorcontrib>Martin, G.</creatorcontrib><creatorcontrib>Vincent, L.</creatorcontrib><creatorcontrib>Garcia, P.</creatorcontrib><creatorcontrib>Barthe, M.F.</creatorcontrib><creatorcontrib>Gentils, A.</creatorcontrib><creatorcontrib>Desgardin, P.</creatorcontrib><title>Helium behavior in α-SiC ceramics investigated by NRA technique</title><title>Nuclear instruments &amp; methods in physics research. Section B, Beam interactions with materials and atoms</title><description>The mechanisms involved in helium migration in α-SiC are investigated through the evolution of its microstructure and of the concentration profiles following annealing at 1300°C/30min for fluences of 1 and 5×10153Hecm−2 and a He implantation energy of 500keV. Helium profiling is performed using the 3He(d,α)1H NRA technique with an improved detection limit of 5atppm. The NRA and TEM techniques clearly show that depending on the initial fluence, a proportion of the helium is trapped within the grain and a part of the helium is released. Analysis of the helium profile changes after annealing enabled to determine a value of the volume diffusion coefficient close to (8±1)×10−17m2s−1 for both fluences studied.</description><subject>Condensed Matter</subject><subject>Depth profiling</subject><subject>Diffusion</subject><subject>Helium</subject><subject>Implantation</subject><subject>Materials Science</subject><subject>NRA</subject><subject>Physics</subject><subject>TEM</subject><issn>0168-583X</issn><issn>1872-9584</issn><issn>1872-9584</issn><issn>0168-583X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kNtKAzEQhoMoWKsv4FXuZdck2z2BF5aiVigKHsC7kMPETunuarJd6GP5Ij6TKRUvnZuB4fsG_p-Qc85SznhxuUpbbHQqGCtTxlPGigMy4lUpkjqvJodkFKEqyavs7ZichLBicfIsH5HrOaxx01ANSzVg5ym29PsrecYZNeBVgybE0wChx3fVg6V6Sx-eprQHs2zxcwOn5MipdYCz3z0mr7c3L7N5sni8u59NF4nJsqJPnLVC57qcqJzXSpSgtS6BGdCg3CS3mrvKqbK0Smtbu0pZx4QCYy2rLRcmG5OL_d-lWssPj43yW9kplPPpQmIrPjLJYsgYlw880mJPG9-F4MH9KZzJXWNyJXeNyV1jkvHoFlG62ksQcwwIXgaD0Bqw6MH00nb4n_4DAih2UQ</recordid><startdate>20070401</startdate><enddate>20070401</enddate><creator>Sauvage, T.</creator><creator>Carlot, G.</creator><creator>Martin, G.</creator><creator>Vincent, L.</creator><creator>Garcia, P.</creator><creator>Barthe, M.F.</creator><creator>Gentils, A.</creator><creator>Desgardin, P.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-7173-769X</orcidid><orcidid>https://orcid.org/0000-0001-6563-2728</orcidid><orcidid>https://orcid.org/0000-0002-1678-3535</orcidid><orcidid>https://orcid.org/0000-0002-0170-9498</orcidid><orcidid>https://orcid.org/0000-0002-6318-9336</orcidid><orcidid>https://orcid.org/0000-0001-8100-2187</orcidid></search><sort><creationdate>20070401</creationdate><title>Helium behavior in α-SiC ceramics investigated by NRA technique</title><author>Sauvage, T. ; Carlot, G. ; Martin, G. ; Vincent, L. ; Garcia, P. ; Barthe, M.F. ; Gentils, A. ; Desgardin, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-fdd2b5b74a519a27ebbb7e0cebeaf45db1f8fa77dabbd9f8adf02aecdd09d12c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Condensed Matter</topic><topic>Depth profiling</topic><topic>Diffusion</topic><topic>Helium</topic><topic>Implantation</topic><topic>Materials Science</topic><topic>NRA</topic><topic>Physics</topic><topic>TEM</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sauvage, T.</creatorcontrib><creatorcontrib>Carlot, G.</creatorcontrib><creatorcontrib>Martin, G.</creatorcontrib><creatorcontrib>Vincent, L.</creatorcontrib><creatorcontrib>Garcia, P.</creatorcontrib><creatorcontrib>Barthe, M.F.</creatorcontrib><creatorcontrib>Gentils, A.</creatorcontrib><creatorcontrib>Desgardin, P.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Nuclear instruments &amp; methods in physics research. Section B, Beam interactions with materials and atoms</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sauvage, T.</au><au>Carlot, G.</au><au>Martin, G.</au><au>Vincent, L.</au><au>Garcia, P.</au><au>Barthe, M.F.</au><au>Gentils, A.</au><au>Desgardin, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Helium behavior in α-SiC ceramics investigated by NRA technique</atitle><jtitle>Nuclear instruments &amp; methods in physics research. Section B, Beam interactions with materials and atoms</jtitle><date>2007-04-01</date><risdate>2007</risdate><volume>257</volume><issue>1-2</issue><spage>231</spage><epage>235</epage><pages>231-235</pages><issn>0168-583X</issn><issn>1872-9584</issn><eissn>1872-9584</eissn><eissn>0168-583X</eissn><abstract>The mechanisms involved in helium migration in α-SiC are investigated through the evolution of its microstructure and of the concentration profiles following annealing at 1300°C/30min for fluences of 1 and 5×10153Hecm−2 and a He implantation energy of 500keV. Helium profiling is performed using the 3He(d,α)1H NRA technique with an improved detection limit of 5atppm. The NRA and TEM techniques clearly show that depending on the initial fluence, a proportion of the helium is trapped within the grain and a part of the helium is released. Analysis of the helium profile changes after annealing enabled to determine a value of the volume diffusion coefficient close to (8±1)×10−17m2s−1 for both fluences studied.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.nimb.2007.01.006</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-7173-769X</orcidid><orcidid>https://orcid.org/0000-0001-6563-2728</orcidid><orcidid>https://orcid.org/0000-0002-1678-3535</orcidid><orcidid>https://orcid.org/0000-0002-0170-9498</orcidid><orcidid>https://orcid.org/0000-0002-6318-9336</orcidid><orcidid>https://orcid.org/0000-0001-8100-2187</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0168-583X
ispartof Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.231-235
issn 0168-583X
1872-9584
1872-9584
0168-583X
language eng
recordid cdi_hal_primary_oai_HAL_in2p3_00169581v1
source ScienceDirect Freedom Collection
subjects Condensed Matter
Depth profiling
Diffusion
Helium
Implantation
Materials Science
NRA
Physics
TEM
title Helium behavior in α-SiC ceramics investigated by NRA technique
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T15%3A54%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Helium%20behavior%20in%20%CE%B1-SiC%20ceramics%20investigated%20by%20NRA%20technique&rft.jtitle=Nuclear%20instruments%20&%20methods%20in%20physics%20research.%20Section%20B,%20Beam%20interactions%20with%20materials%20and%20atoms&rft.au=Sauvage,%20T.&rft.date=2007-04-01&rft.volume=257&rft.issue=1-2&rft.spage=231&rft.epage=235&rft.pages=231-235&rft.issn=0168-583X&rft.eissn=1872-9584&rft_id=info:doi/10.1016/j.nimb.2007.01.006&rft_dat=%3Chal_cross%3Eoai_HAL_in2p3_00169581v1%3C/hal_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c336t-fdd2b5b74a519a27ebbb7e0cebeaf45db1f8fa77dabbd9f8adf02aecdd09d12c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true