Influence of ion energy on damage induced by Au-ion implantation in silicon carbide single crystals

This article reports on the influence of the ion energy on the damage induced by Au-ion implantation in silicon carbide single crystals. 6H-SiC samples were implanted with Au ions at room temperature at two different energies: 4 and 20 MeV. Both Rutherford Backscattering spectrometry in channelling...

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Bibliographic Details
Published in:Journal of materials science 2011-10, Vol.46 (19), p.6390-6395
Main Authors: Gentils, Aurélie, Linez, Florence, Canizarès, Aurélien, Simon, Patrick, Thomé, Lionel, Barthe, Marie-France
Format: Article
Language:English
Subjects:
Amorphization
Backscattering
Channeling
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Collisions (Nuclear physics)
Condensed Matter
Crystal defects
Crystallography and Scattering Methods
Damage
Damage accumulation
Damage detection
Fluence
Gold
Implantation
Ion implantation
Materials Science
Physics
Point defects
Polymer Sciences
Raman spectroscopy
Silicon
Silicon carbide
Single crystals
Solid Mechanics
Spectrometry
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Summary:This article reports on the influence of the ion energy on the damage induced by Au-ion implantation in silicon carbide single crystals. 6H-SiC samples were implanted with Au ions at room temperature at two different energies: 4 and 20 MeV. Both Rutherford Backscattering spectrometry in channelling geometry (RBS/C) and Raman spectroscopy were used to probe the ion implantation-induced damage. Results show that the accumulated damage increases with the fluence up to the amorphization state. RBS/C data indicate that 4-MeV implantation induces more damage than 20-MeV implantation at a given fluence. This effect is attributed to nuclear collisions since the amount of damage is identical at 4 or 20 MeV when the fluence is rescaled in dpa. Surprisingly, Raman data detect more damage for 20-MeV implantation than for 4-MeV implantation at low fluence (below 10 13  cm −2 ) where point defects are likely formed.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-011-5587-4