Synthesis of mesoporous amorphous silica by Kr and Xe ion implantation: Transmission electron microscopy study of induced nanostructures

• Published in: Microporous and mesoporous materials 2010-07, Vol.132 (1), p.163-173
• Main Authors: Oliviero, E., Ruault, M.-O., Décamps, B., Fotuna, F., Ntsoenzok, E., Kaïtasov, O., Collin, S.
• Format: Article
• Language: English
• Subjects: Bubbles; Cavities; Chemistry; Colloidal state and disperse state; Condensed Matter; Engineering Sciences; Exact sciences and technology; General and physical chemistry; Holes; Implantation; Ionic mobility; Materials; Materials Science; Mesoporous silica; Nanocomposites; Nanomaterials; Nanostructure; Noble gas implantation; Physics; Porous materials; Silicon dioxide; Structural investigation
• ISSN: 1387-1811; 1873-3093
• DOI: 10.1016/j.micromeso.2010.02.015

Thermally grown amorphous SiO 2 was implanted at room temperature with heavy noble gases Kr and Xe in order to create cavities in the oxide and increase its porosity. The implantation energies were chosen in order to have the same implantation depth for both ions. Although both ions induce bubbles in amorphous SiO 2, bubble size and spatial distribution depend upon the ion mass. Moreover, Xe implantation leads to the additional formation of “nanoclusters”. Thermal stability of bubbles/cavities depends on the implanted ion. The nucleation of bubbles and nanoclusters in amorphous SiO 2 is discussed in terms of ion mobility, gas–defect interactions, and chemical interaction. Bubble growth is shown to occur by a migration and coalescence process.