Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the perip...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2016-08, Vol.63 (4), p.2010-2015
Main Authors: Gupta, Viyas, Bosser, Alexandre, Tsiligiannis, Georgios, Zadeh, Ali, Javanainen, Arto, Virtanen, Ari, Puchner, Helmut, Saigne, Frederic, Wrobel, Frederic, Dilillo, Luigi
Format: Article
Language:English
Subjects:
130 nm
Computer architecture
Engineering Sciences
Ferroelectric films
FRAM
Heuristic algorithms
Microprocessors
multiple cell upset (MCU)
Nonvolatile memory
Nuclear Experiment
Physics
radiation testing
Random access memory
single event upset (SEU)
static and dynamic mode testing
Xenon
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Summary:The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2559943