Longitudinal twinning α-In 2Se 3 nanowires for UV-visible-NIR photodetectors with high sensitivity

Longitudinal twinning α-In 2Se 3 nanowires with the (10 1 ¯ 8) twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized α-In 2Se 3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm 2·V − 1·S − 1 and a...

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Bibliographic Details
Published in:Frontiers of Optoelectronics (Online) 2018, Vol.11 (3), p.245-255
Main Authors: ZHANG, Zidong, YANG, Juehan, MEI, Fuhong, SHEN, Guozhen
Format: Article
Language:English
Subjects:
nanowires
photodetectors
twinning
ultraviolet-visible-near-infrared (UV-visible-NIR)
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Summary:Longitudinal twinning α-In 2Se 3 nanowires with the (10 1 ¯ 8) twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized α-In 2Se 3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm 2·V − 1·S − 1 and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared (UV-visible-NIR) region. Besides, the fabricated device showed a high responsivity of 8.57 × 10 5 A·W − 1, high external quantum efficiency up to 8.8 × 10 7% and a high detectivity of 1.58 × 10 12 Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In 2Se 3 nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In 2Se 3 nanowires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.
ISSN:2095-2759
2095-2767
DOI:10.1007/s12200-018-0820-2