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Cutaneous interstitial nitric oxide concentration does not increase during heat stress in humans

1  Institute for Exercise and Environmental Medicine, Presbyterian Hospital of Dallas, Dallas 75231; 2  Department of Internal Medicine, University of Texas Southwestern Medical Center, Dallas, Texas 75235; and 3  Division of Cardiology, The Pennsylvania State University College of Medicine, The Mil...

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Bibliographic Details
Published in:Journal of applied physiology (1985) 2001-03, Vol.90 (3), p.1020-1024
Main Authors: Crandall, C. G, MacLean, D. A
Format: Article
Language:English
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Summary:1  Institute for Exercise and Environmental Medicine, Presbyterian Hospital of Dallas, Dallas 75231; 2  Department of Internal Medicine, University of Texas Southwestern Medical Center, Dallas, Texas 75235; and 3  Division of Cardiology, The Pennsylvania State University College of Medicine, The Milton S. Hershey Medical Center, Hershey, Pennsylvania 17033 Inhibition of cutaneous nitric oxide (NO) synthase reduces the magnitude of cutaneous vasodilation during whole body heating in humans. However, this observation is insufficient to conclude that NO concentration increases in the skin during a heat stress. This study was designed to test the hypothesis that whole body heating increases cutaneous interstitial NO concentration. This was accomplished by placing 2 microdialysis membranes in the forearm dermal space of 12 subjects. Both membranes were perfused with lactated Ringer solutions at a rate of 2 µl/min. In both normothermia and during whole body heating via a water perfused suit, dialysate from these membranes were obtained and analyzed for NO using the chemiluminescence technique. In six of these subjects, after the heat stress, the membranes were perfused with a 1 M solution of acetylcholine to stimulate NO release. Dialysate from these trials was also assayed to quantify cutaneous interstitial NO concentration. Whole body heating increased skin temperature from 34.6 ± 0.2   to 38.8 ± 0.2°C ( P  
ISSN:8750-7587
1522-1601
DOI:10.1152/jappl.2001.90.3.1020