Fast-Switching and Low-Loss SOI LIGBT With Recombination Electrode and Double U-Shaped P-Regions

• Published in: IEEE transactions on electron devices 2023-02, Vol.70 (2), p.1-5
• Main Authors: Wei, Jie, Dai, Kaiwei, Yang, Kemeng, Zhu, Pengchen, Li, Jie, Li, Zhaoji, Zhang, Bo, Luo, Xiaorong
• Format: Article
• Language: English
• Subjects: Anodes; Cathodes; Depletion; Electric breakdown; Electrodes; Electron trajectories; Electrons; Insulated gate bipolar transistors; Latch-up; lateral insulated gate bipolar transistor (LIGBT); Leakage currents; ON-state voltage drop; recombination electrode (RE); Resistance; Semiconductor devices; Short circuits; Silicon-on-insulator; silicon-on-insulator (SOI); SOI (semiconductors); Spontaneous emission; Switching; turn-off loss; U-shaped; Voltage drop
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2022.3232588

A novel fast-switching low loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed and investigated by simulation. It features a recombination electrode (RE) at anode side and U-shaped P-regions (UP) at the anode and cathode side, respectively (UPRE LIGBT). In a low ON-state anode voltage ( \textit{V}_{\text{A}} ), the anode side UP (UPa) depletes the N-region under the RE to increase the distributed resistance and thus realize snapback free. Meanwhile, the UPa increases the hole injection area to reduce the ON-state voltage drop ( \textit{V}_{\biosc{on}} ). During the turning off, the depletion region between the UPa and N-region shrinks and provides an electron path to the RE, which accelerates electrons to recombine with holes through the RE and thus decreases \textit{E}_{\biosc{off}} . Therefore, the UPRE LIGBT performs a superior tradeoff relationship between \textit{V}_{\biosc{on}} and \textit{E}_{\biosc{off}} . Furthermore, the cathode side UP (UPc) provides a low-resistance hole current path to enhance the latch-up immunity. Consequently, at the same \textit{E}_{\biosc{off}} , \textit{V}_{\biosc{on}} of UPRE LIGBT is 27% and 10% lower than that of separated shorted-anode (SSA) and multisegment anode (MSA) LIGBT, respectively. At the same \textit{V}_{\biosc{on}} , the UPRE LIGBT reduces \textit{E}_{\biosc{off}} by 32% compared with the MSA LIGBT. The UPRE LIGBT improves the short-circuit (SC) withstanding time by 33.8% compared with the one without UPc.