Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling

Low temperature Si 1-x Ge x source-drain epitaxy processes are associated with exploratory contact metals to identify stacks alleviating access resistance issues in modern logic devices. TiN/W metal-to-metal interfaces featuring contact resistivities

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Bibliographic Details
Main Authors: Porret, C., Everaert, J.-L., Schaekers, M., Ragnarsson, L.-A., Hikavyy, A., Rosseel, E., Rengo, G., Loo, R., Khazaka, R., Givens, M., Piao, X., Mertens, S., Heylen, N., Mertens, H., De Carvalho Cavalcante, C. Toledo, Sterckx, G., Brus, S., Mehta, A. Nalin, Korytov, M., Batuk, D., Favia, P., Langer, R., Pourtois, G., Swerts, J., Litta, E. Dentoni, Horiguchi, N.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Conductivity
Doping
Fabrication
Metals
Temperature
Temperature sensors
Online Access:Request full text
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Description
Summary:Low temperature Si 1-x Ge x source-drain epitaxy processes are associated with exploratory contact metals to identify stacks alleviating access resistance issues in modern logic devices. TiN/W metal-to-metal interfaces featuring contact resistivities
ISSN:2156-017X
DOI:10.1109/IEDM45625.2022.10019501