Terahertz In0.8 Ga0.2 As quantum-well HEMTs toward 6G applications

We present the systematic analysis of L g scaling behavior and the impact of the side-recess spacing (L_{side}) on DC and high-frequency characteristics of In 0.8 Ga 0.2 As QW HEMTs with L g from 10 \mu \mathrm{m} to 20 nm, aiming to explore the scaling limit of f max and thereby demonstrate THz dev...

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Main Authors: Park, Wan-Soo, Jo, Hyeon-Bhin, Kim, Hyo-Jin, Choi, Su-Min, Yoo, Ji-Hoon, Kim, Ji-Hun, Jeong, Hyeon-Seok, George, Sethu, Beak, Ji-Min, Lee, In-Geun, Kim, Tae-Woo, Kim, Sang-Kuk, Yun, Jacob, Kim, Ted, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Lee, Jae-Hak, Kim, Dae-Hyun
Format: Conference Proceeding
Language:English
Subjects:
6G mobile communication
Behavioral sciences
Frequency measurement
HEMTs
MODFETs
Ohmic contacts
Systematics
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Summary:We present the systematic analysis of L g scaling behavior and the impact of the side-recess spacing (L_{side}) on DC and high-frequency characteristics of In 0.8 Ga 0.2 As QW HEMTs with L g from 10 \mu \mathrm{m} to 20 nm, aiming to explore the scaling limit of f max and thereby demonstrate THz devices. The fabricated L_{g}= 20 nm device with L_{side} = 150 nm exhibited {DIBL}=60 mV/V and f_{T}/ f_{max} \quad =0.75 /1.1 THz, while the device showed with L_{side}=50 nm {DIBL}=110 mV/V and f_{T}/ f_{max}=0.72 /0.53. Strict control of short-channel effects from the viewpoint of DIBL was central to maximize the enhancement of f max as L g scaled down aggressively. Moreover, we explained the physical mechanism of the decrease in f max for HEMTs with L g scaled down to sub-50 nm. The results in this work represent the best balance of f T and f max in any transistor technology and the highest f T in any FET technology.
ISSN:2156-017X
DOI:10.1109/IEDM45625.2022.10019567