Surface structure and electrical properties of Ge films on semi-insulating GaAs substrates

Structural, electrical and optical properties of Ge films on semi-insulating GaAs substrates have been investigated. Ge films were obtained using thermal evaporation in a vacuum onto semi-insulated GaAs(100) substrates. During the Ge deposition process the substrate temperature was varied from 120 t...

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Bibliographic Details
Main Authors: Mitin, V.F., Kholevchuk, V.V., Konakova, R.V., Venger, E.F., Odarich, V.A., Rudenko, O.V., Semen'ko, M.P., Khimenko, M.V.
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Atomic measurements
Electrons
Force measurement
Gallium arsenide
Optical films
Substrates
Surface structures
Temperature
X-ray diffraction
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Summary:Structural, electrical and optical properties of Ge films on semi-insulating GaAs substrates have been investigated. Ge films were obtained using thermal evaporation in a vacuum onto semi-insulated GaAs(100) substrates. During the Ge deposition process the substrate temperature was varied from 120 to 450 /spl deg/C. The film thicknesses were varied from 0.8 up to 1.5 /spl mu/m. X-ray and electron diffraction, atomic force microscopy (AFM), multiangle ellipsometric and galvanomagnetic (Hall effect, resistance and magneto-resistance) measurements have been used for these investigations.
DOI:10.1109/MIEL.2002.1003222